MDIS5N40TH Todos los transistores

 

MDIS5N40TH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDIS5N40TH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 46 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: TO-251-VS

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MDIS5N40TH datasheet

 ..1. Size:1013K  magnachip
mdis5n40th.pdf pdf_icon

MDIS5N40TH

MDIS5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDIS5N40 uses advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 3.4A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.6 @VGS = 10V excellent quality. MDIS5N40 is suitable device for SMPS, HID and general purpose application

 ..2. Size:320K  inchange semiconductor
mdis5n40th.pdf pdf_icon

MDIS5N40TH

isc N-Channel MOSFET Transistor MDIS5N40TH FEATURES Drain Current I = 3.4A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.1. Size:960K  magnachip
mdis5n50th.pdf pdf_icon

MDIS5N40TH

MDIS5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDIS5N50 uses advanced MagnaChip s VDS = 500V MOSFET technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and ID = 4.4A @VGS = 10V excellent quality. RDS(ON) 1.4 @VGS = 10V MDIS5N50 is suitable device for SMPS, HID and general

 8.2. Size:321K  inchange semiconductor
mdis5n50th.pdf pdf_icon

MDIS5N40TH

isc N-Channel MOSFET Transistor MDIS5N50TH FEATURES Drain Current I = 4.4A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

Otros transistores... MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH , AO3407 , MDIS5N50TH , MDP10N50TH , MDP10N60GTH , MDP11N60TH , MDP12N50BTH , MDP12N50FTH , MDP13N50BTH , MDP13N50GTH .

 

 

 


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