MDP18N50BTH Todos los transistores

 

MDP18N50BTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDP18N50BTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 236 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 18 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 48 nC
   Tiempo de subida (tr): 82 nS
   Conductancia de drenaje-sustrato (Cd): 307 pF
   Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
   Paquete / Cubierta: TO-220

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MDP18N50BTH Datasheet (PDF)

 ..1. Size:1244K  magnachip
mdf18n50bth mdp18n50bth.pdf

MDP18N50BTH
MDP18N50BTH

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

 ..2. Size:289K  inchange semiconductor
mdp18n50bth.pdf

MDP18N50BTH
MDP18N50BTH

isc N-Channel MOSFET Transistor MDP18N50BTHFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 6.1. Size:1292K  magnachip
mdp18n50th.pdf

MDP18N50BTH
MDP18N50BTH

MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachips I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R

 6.2. Size:289K  inchange semiconductor
mdp18n50th.pdf

MDP18N50BTH
MDP18N50BTH

isc N-Channel MOSFET Transistor MDP18N50THFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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History: FHP20N50A

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