MDP18N50BTH - описание и поиск аналогов

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

isc N-Channel MOSFET Transistor MDP18N50BTH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachip s I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R

isc N-Channel MOSFET Transistor MDP18N50TH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ