MDS1654URH Todos los transistores

 

MDS1654URH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDS1654URH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24.6 nS

Cossⓘ - Capacitancia de salida: 272 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: SOIC-8

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MDS1654URH datasheet

 ..1. Size:729K  magnachip
 mds1654urh.pdf pdf_icon

MDS1654URH

MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.1. Size:678K  magnachip
 mds1655urh.pdf pdf_icon

MDS1654URH

MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC

 8.2. Size:641K  magnachip
 mds1651urh.pdf pdf_icon

MDS1654URH

MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17m General Description Features The MDS1651 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.3. Size:1043K  magnachip
 mds1652eruh.pdf pdf_icon

MDS1654URH

Preliminary Subject to change without notice MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. Excelle

MOSTRAR MÁS

Otros transistores... MDS1524URH , MDS1525URH , MDS1526URH , MDS1527URH , MDS1528URH , MDS1651URH , MDS1652ERUH , MDS1653URH , IRFB4227 , MDS1655URH , MDS1656URH , MDS1754RH , MDS1903URH , MDS1951URH , MDS3603URH , MDS3604URH , MDS3651URH .

History: MTE050N15BRV8 | LSE55R140GT | SIHP120N60E

 

 

 

 

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