MDS1654URH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDS1654URH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 24.6
nS
Cossⓘ -
Output Capacitance: 272
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
SOIC-8
MDS1654URH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDS1654URH
Datasheet (PDF)
..1. Size:729K magnachip
mds1654urh.pdf 
MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5mGeneral Description Features The MDS1654 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)
8.1. Size:678K magnachip
mds1655urh.pdf
MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC
8.2. Size:641K magnachip
mds1651urh.pdf
MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17mGeneral Description Features The MDS1651 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)
8.3. Size:1043K magnachip
mds1652eruh.pdf
Preliminary Subject to change without notice ` MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. Excelle
8.4. Size:689K magnachip
mds1656urh.pdf
MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.2A @V = 10V D GSswitching performance and reliability RDS(ON)
8.5. Size:745K magnachip
mds1653urh.pdf
MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mGeneral Description Features The MDS1653 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 12A @VGS = 10V high switching performance and excellent reliability. RDS(ON)
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