MDS5651URH Todos los transistores

 

MDS5651URH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDS5651URH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SO-8

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MDS5651URH datasheet

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 mds5651urh.pdf pdf_icon

MDS5651URH

MDS5651 Dual N-Channel Trench MOSFET 30V, 7.5A, 26m General Description Features The MDS5651 uses advanced MagnaChip s trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.5A @V = 10V D GS switching performance and reliability RDS(ON)

 8.1. Size:750K  magnachip
 mds5652urh.pdf pdf_icon

MDS5651URH

MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, high I = 7.5A @V = 10V D GS switching performance and exellent reliability. RDS(ON)

 9.1. Size:673K  magnachip
 mds5601urh.pdf pdf_icon

MDS5651URH

MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m General Description Features The MDS5601 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state ID = 12.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS5601 is suitable for DC/DC converter and

Otros transistores... MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , MDS3754ARH , MDS5601URH , STP75NF75 , MDS5652URH , MDS5951URH , MDU1401SVRH , MDU1402VRH , MDU1511RH , MDU1512RH , MDU1513URH , MDU1514URH .

History: GM8205 | MTP12N10L | SE2333 | AGM665E

 

 

 

 

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