All MOSFET. MDS5651URH Datasheet

 

MDS5651URH Datasheet and Replacement


   Type Designator: MDS5651URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.5 nC
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO-8
 

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MDS5651URH Datasheet (PDF)

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MDS5651URH

MDS5651Dual N-Channel Trench MOSFET 30V, 7.5A, 26m General Description Features The MDS5651 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.5A @V = 10V D GSswitching performance and reliability RDS(ON)

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MDS5651URH

MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, high I = 7.5A @V = 10V D GSswitching performance and exellent reliability. RDS(ON)

 9.1. Size:673K  magnachip
 mds5601urh.pdf pdf_icon

MDS5651URH

MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mGeneral Description Features The MDS5601 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state ID = 12.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS5601 is suitable for DC/DC converter and

Datasheet: MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , MDS3754ARH , MDS5601URH , 12N60 , MDS5652URH , MDS5951URH , MDU1401SVRH , MDU1402VRH , MDU1511RH , MDU1512RH , MDU1513URH , MDU1514URH .

Keywords - MDS5651URH MOSFET datasheet

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