MDU1516URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDU1516URH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10.6 nS
   Cossⓘ - Capacitancia de salida: 178 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: POWERDFN56

Búsqueda de reemplazo de MOSFET MDU1516URH

MDU1516URH Datasheet (PDF)

..1. Size:702K magnachip
mdu1516urh.pdf

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mGeneral Description Features The MDU1516 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 47.6A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1516 is suitable device for DC/DC Converter

8.1. Size:729K magnachip
mdu1513urh.pdf

MDU1513 Single N-channel Trench MOSFET 30V, 88.1A, 4.6mGeneral Description Features The MDU1513 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 88.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1513 is suitable device for DC/DC Converter

8.2. Size:752K magnachip
mdu1511rh.pdf

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mGeneral Description Features The MDU1511 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) quality. MDU1511 is suitable device for DC/DC Converter

8.3. Size:1008K magnachip
mdu1515urh.pdf

MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2m General Description Features The MDU1515 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 57.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1515 is suitable device for DC/DC Converter

8.4. Size:711K magnachip
mdu1514urh.pdf

MDU1514 Single N-channel Trench MOSFET 30V, 66.3A, 6.0mGeneral Description Features The MDU1514 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 66.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1514 is suitable device for DC/DC Converter

8.5. Size:759K magnachip
mdu1518urh.pdf

MDU1518 Single N-channel Trench MOSFET 30V, 94.5A, 4.2mGeneral Description Features The MDU1518 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 94.5A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1518 is suitable device for DC/DC Converter

8.6. Size:745K magnachip
mdu1517rh.pdf

MDU1517 Single N-channel Trench MOSFET 30V, 100.0A, 2.9mGeneral Description Features The MDU1517 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1517 is suitable device for DC to DC

8.7. Size:725K magnachip
mdu1512rh.pdf

MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mGeneral Description Features The MDU1512 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1512 is suitable device for DC to DC

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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