MDU1516URH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDU1516URH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 18.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10.6 nS
Cossⓘ - Output Capacitance: 178 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: POWERDFN56
MDU1516URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDU1516URH Datasheet (PDF)
mdu1516urh.pdf
MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mGeneral Description Features The MDU1516 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 47.6A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1516 is suitable device for DC/DC Converter
mdu1513urh.pdf
MDU1513 Single N-channel Trench MOSFET 30V, 88.1A, 4.6mGeneral Description Features The MDU1513 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 88.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1513 is suitable device for DC/DC Converter
mdu1511rh.pdf
MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mGeneral Description Features The MDU1511 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) quality. MDU1511 is suitable device for DC/DC Converter
mdu1515urh.pdf
MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2m General Description Features The MDU1515 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 57.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1515 is suitable device for DC/DC Converter
mdu1514urh.pdf
MDU1514 Single N-channel Trench MOSFET 30V, 66.3A, 6.0mGeneral Description Features The MDU1514 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 66.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1514 is suitable device for DC/DC Converter
mdu1518urh.pdf
MDU1518 Single N-channel Trench MOSFET 30V, 94.5A, 4.2mGeneral Description Features The MDU1518 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 94.5A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1518 is suitable device for DC/DC Converter
mdu1517rh.pdf
MDU1517 Single N-channel Trench MOSFET 30V, 100.0A, 2.9mGeneral Description Features The MDU1517 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1517 is suitable device for DC to DC
mdu1512rh.pdf
MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mGeneral Description Features The MDU1512 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1512 is suitable device for DC to DC
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXFQ50N60P3
History: IXFQ50N60P3
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