2SK3979 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3979
   Código: K3979
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Voltaje de corte de la puerta |Vgs(off)|: 2 V
   Carga de la puerta (Qg): 18.2 nC
   Tiempo de subida (tr): 26 nS
   Conductancia de drenaje-sustrato (Cd): 85 pF
   Resistencia entre drenaje y fuente RDS(on): 0.45 Ohm
   Paquete / Cubierta: TO251 TO252

Búsqueda de reemplazo de MOSFET 2SK3979

2SK3979 Datasheet (PDF)

..1. Size:40K sanyo
2sk3979.pdf

Ordering number : ENA0263 2SK3979SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3979ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 30 VDrain Curre

0.1. Size:286K inchange semiconductor
2sk3979-d.pdf

isc N-Channel MOSFET Transistor 2SK3979-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.2. Size:354K inchange semiconductor
2sk3979-i.pdf

isc N-Channel MOSFET Transistor 2SK3979-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.1. Size:50K 1
2sk3978.pdf

Ordering number : ENA0686 2SK3978SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3978ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 20

8.2. Size:49K 1
2sk3977.pdf

Ordering number : ENA0391 2SK3977SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3977ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4.5V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 2

8.3. Size:354K inchange semiconductor
2sk3977-i.pdf

isc N-Channel MOSFET Transistor 2SK3977-IFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.4. Size:354K inchange semiconductor
2sk3978-i.pdf

isc N-Channel MOSFET Transistor 2SK3978-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.5. Size:286K inchange semiconductor
2sk3978-d.pdf

isc N-Channel MOSFET Transistor 2SK3978-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.6. Size:286K inchange semiconductor
2sk3977-d.pdf

isc N-Channel MOSFET Transistor 2SK3977-DFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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