2SK3979 Todos los transistores

 

2SK3979 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3979
   Código: K3979
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
   Qgⓘ - Carga de la puerta: 18.2 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO251 TO252

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2SK3979 Datasheet (PDF)

 ..1. Size:40K  sanyo
2sk3979.pdf

2SK3979
2SK3979

Ordering number : ENA0263 2SK3979SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3979ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 30 VDrain Curre

 0.1. Size:286K  inchange semiconductor
2sk3979-d.pdf

2SK3979
2SK3979

isc N-Channel MOSFET Transistor 2SK3979-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 0.2. Size:354K  inchange semiconductor
2sk3979-i.pdf

2SK3979
2SK3979

isc N-Channel MOSFET Transistor 2SK3979-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.1. Size:50K  1
2sk3978.pdf

2SK3979
2SK3979

Ordering number : ENA0686 2SK3978SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3978ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 20

 8.2. Size:49K  1
2sk3977.pdf

2SK3979
2SK3979

Ordering number : ENA0391 2SK3977SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3977ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4.5V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 2

 8.3. Size:354K  inchange semiconductor
2sk3977-i.pdf

2SK3979
2SK3979

isc N-Channel MOSFET Transistor 2SK3977-IFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.4. Size:354K  inchange semiconductor
2sk3978-i.pdf

2SK3979
2SK3979

isc N-Channel MOSFET Transistor 2SK3978-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.5. Size:286K  inchange semiconductor
2sk3978-d.pdf

2SK3979
2SK3979

isc N-Channel MOSFET Transistor 2SK3978-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.6. Size:286K  inchange semiconductor
2sk3977-d.pdf

2SK3979
2SK3979

isc N-Channel MOSFET Transistor 2SK3977-DFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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