2SK3979
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3979
Marking Code: K3979
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18.2
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
TO251
TO252
2SK3979
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3979
Datasheet (PDF)
..1. Size:40K sanyo
2sk3979.pdf 
Ordering number : ENA0263 2SK3979SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3979ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 30 VDrain Curre
0.1. Size:286K inchange semiconductor
2sk3979-d.pdf
isc N-Channel MOSFET Transistor 2SK3979-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.2. Size:354K inchange semiconductor
2sk3979-i.pdf
isc N-Channel MOSFET Transistor 2SK3979-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.1. Size:50K 1
2sk3978.pdf
Ordering number : ENA0686 2SK3978SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3978ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 200 VGate-to-Source Voltage VGSS 20
8.2. Size:49K 1
2sk3977.pdf
Ordering number : ENA0391 2SK3977SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3977ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4.5V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 2
8.3. Size:354K inchange semiconductor
2sk3977-i.pdf
isc N-Channel MOSFET Transistor 2SK3977-IFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.4. Size:354K inchange semiconductor
2sk3978-i.pdf
isc N-Channel MOSFET Transistor 2SK3978-IFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.5. Size:286K inchange semiconductor
2sk3978-d.pdf
isc N-Channel MOSFET Transistor 2SK3978-DFEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.6. Size:286K inchange semiconductor
2sk3977-d.pdf
isc N-Channel MOSFET Transistor 2SK3977-DFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 92m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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