CEP50N06 Todos los transistores

 

CEP50N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP50N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 131 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO-220

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CEP50N06 datasheet

 ..1. Size:370K  cet
 cep50n06 ceb50n06.pdf pdf_icon

CEP50N06

CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 8.1. Size:446K  cet
 cep50n10 ceb50n10.pdf pdf_icon

CEP50N06

CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 9.1. Size:128K  cet
 cep50p03 ceb50p03.pdf pdf_icon

CEP50N06

CEP50P03/CEB50P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20m @VGS = -10V. RDS(ON) =32m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc

 9.2. Size:344K  ncepower
 ncep50p80ak.pdf pdf_icon

CEP50N06

http //www.ncepower.com NCEP50P80AK NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

MOSTRAR MÁS

Otros transistores... MDV1548URH , MDV1595SURH , MDV3604URH , MDV3605URH , MDV5524URH , MDZ1N60UMH , 2SK3979 , 2SK4118LS , P60NF06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P , PDC4801R , PMF250XN , TK10A60W .

History: WMM13N50C4

 

 

 

 

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