CEP50N06 - аналоги, параметры транзистора - Справочник транзисторов

CEP50N06 даташит

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cep50n06 ceb50n06.pdf pdf_icon

CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

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cep50n10 ceb50n10.pdf pdf_icon

CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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cep50p03 ceb50p03.pdf pdf_icon

CEP50P03/CEB50P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20m @VGS = -10V. RDS(ON) =32m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc

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ncep50p80ak.pdf pdf_icon

http //www.ncepower.com NCEP50P80AK NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw