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CEP50N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEP50N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 131 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для CEP50N06

 

 

CEP50N06 Datasheet (PDF)

 ..1. Size:370K  cet
 cep50n06 ceb50n06.pdf

CEP50N06 CEP50N06

CEP50N06/CEB50N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 8.1. Size:446K  cet
 cep50n10 ceb50n10.pdf

CEP50N06 CEP50N06

CEP50N10/CEB50N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 50A, RDS(ON) = 30m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 9.1. Size:128K  cet
 cep50p03 ceb50p03.pdf

CEP50N06 CEP50N06

CEP50P03/CEB50P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -47A, RDS(ON) =20m @VGS = -10V.RDS(ON) =32m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

 9.2. Size:344K  ncepower
 ncep50p80ak.pdf

CEP50N06 CEP50N06

http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.3. Size:312K  ncepower
 ncep50p80.pdf

CEP50N06 CEP50N06

http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 9.4. Size:339K  ncepower
 ncep50p80a.pdf

CEP50N06 CEP50N06

http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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