MSD20N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MSD20N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 50 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 19 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Carga de la puerta (Qg): 5.1 nC
   Tiempo de subida (tr): 9 nS
   Resistencia entre drenaje y fuente RDS(on): 0.094 Ohm
   Paquete / Cubierta: TO-252

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MSD20N06 Datasheet (PDF)

..1. Size:541K bruckewell
msd20n06.pdf

MSD20N06 N-Channel 60-V (D-S) MOSFET Description The MSD20N06 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features White LED boost converters Autom

8.1. Size:591K bruckewell
msd20n10.pdf

MSD20N10 N-Channel 100-V (D-S) MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low rDS(on) trench technology Lo

9.1. Size:216K diodes
nmsd200b01.pdf

NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database.General Description NMSD200B01 is best suited for switching voltage regulator and power management applications. It 6improves efficiency and reliability of DC-DC controllers 5used in Voltage Regulator Modules (VRM) and can 4support c

9.2. Size:213K diodes
nmsd200b01-7.pdf

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