MSD20N06 MOSFET Datasheet: N-Ch, 60V, 19A. Full specification with pinout and replacement list

MSD20N06 Specs and Replacement

Type Designator: MSD20N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: TO-252

MSD20N06 substitution

- MOSFET ⓘ Cross-Reference Search

MSD20N06 datasheet

..1. Size:541K bruckewell
msd20n06.pdf pdf_icon

MSD20N06 N-Channel 60-V (D-S) MOSFET Description The MSD20N06 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features White LED boost converters Autom... See More ⇒

8.1. Size:591K bruckewell
msd20n10.pdf pdf_icon

MSD20N10 N-Channel 100-V (D-S) MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low rDS(on) trench technology Lo... See More ⇒

9.1. Size:216K diodes
nmsd200b01.pdf pdf_icon

NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database. General Description NMSD200B01 is best suited for switching voltage regulator and power management applications. It 6 improves efficiency and reliability of DC-DC controllers 5 used in Voltage Regulator Modules (VRM) and can 4 support c... See More ⇒

9.2. Size:213K diodes
nmsd200b01-7.pdf pdf_icon