MSD4N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MSD4N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-252

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MSD4N40 Datasheet (PDF)

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msd4n40.pdf

MSD4N40 400V N-Channel MOSFET Description The MSD4N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

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msd4n60.pdf

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme

9.2. Size:875K bruckewell
msd4n70.pdf

MSD4N70 700V N-Channel MOSFET Description The MSD4N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

Otros transistores... MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , 5N65 , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 .

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