MSD4N40 Datasheet and Replacement
Type Designator: MSD4N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-252
MSD4N40 substitution
MSD4N40 Datasheet (PDF)
msd4n40.pdf

MSD4N40 400V N-Channel MOSFET Description The MSD4N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test
msd4n60.pdf

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme
msd4n70.pdf

MSD4N70 700V N-Channel MOSFET Description The MSD4N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test
Datasheet: MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , HY1906P , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 .
History: APT4080BN | 25N10G-TM3-T
Keywords - MSD4N40 MOSFET datasheet
MSD4N40 cross reference
MSD4N40 equivalent finder
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MSD4N40 substitution
MSD4N40 replacement
History: APT4080BN | 25N10G-TM3-T



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