MSD4N40 Specs and Replacement
Type Designator: MSD4N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-252
MSD4N40 substitution
- MOSFET ⓘ Cross-Reference Search
MSD4N40 datasheet
msd4n60.pdf
MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme... See More ⇒
Detailed specifications: MSD20N10, MSD23N22, MSD23N58, MSD2N60, MSD2N70, MSD30N06, MSD30P06, MSD40P03, AOD4184A, MSD4N60, MSD4N70, MSD50N03, MSD50N10, MSD80N03, MSE20N06N, MSF10N40, MSF10N60
Keywords - MSD4N40 MOSFET specs
MSD4N40 cross reference
MSD4N40 equivalent finder
MSD4N40 pdf lookup
MSD4N40 substitution
MSD4N40 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E
Popular searches
d2499 datasheet | 6r190p6 datasheet | 2n270 | 2n2924 | mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet