MSF10N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSF10N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 145 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MSF10N60 MOSFET
MSF10N60 Datasheet (PDF)
msf10n60.pdf

MSF10N60 N-Channel 600V MOSFET Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220AB package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requ
msf10n65.pdf

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir
mmsf10n02z.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which10 AMPERESutilize Motorolas High Cell Density HDTMOS process a
mmsf10n03z.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESD Protected GateSINGLE TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize10 AMPERESMotorolas High Cell Density TMOS process and conta
Otros transistores... MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , IRF740 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 .
History: SWU11N65D | PHB129NQ04LT | QJD1210010 | LND06R079 | BL4N80-D | GP1M009A070X | BUK7Y7R6-40E
History: SWU11N65D | PHB129NQ04LT | QJD1210010 | LND06R079 | BL4N80-D | GP1M009A070X | BUK7Y7R6-40E



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