Справочник MOSFET. MSF10N60

 

MSF10N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MSF10N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

MSF10N60 Datasheet (PDF)

 ..1. Size:907K  bruckewell
msf10n60.pdfpdf_icon

MSF10N60

MSF10N60 N-Channel 600V MOSFET Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220AB package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requ

 7.1. Size:1078K  bruckewell
msf10n65.pdfpdf_icon

MSF10N60

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

 8.1. Size:189K  motorola
mmsf10n02z.pdfpdf_icon

MSF10N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which10 AMPERESutilize Motorolas High Cell Density HDTMOS process a

 8.2. Size:201K  motorola
mmsf10n03z.pdfpdf_icon

MSF10N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESD Protected GateSINGLE TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize10 AMPERESMotorolas High Cell Density TMOS process and conta

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRF241 | NCE70T180D

 

 
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