MSF5N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSF5N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.2 nS
Cossⓘ - Capacitancia de salida: 86 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Paquete / Cubierta: TO-220F
- Selección de transistores por parámetros
MSF5N60 Datasheet (PDF)
msf5n60.pdf

MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
mmsf5n02hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf5n03hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
mmsf5n02hdrev5.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDPF680N10T | KRF7343 | FDMS3660AS | MTP9435Q8 | UT20N03 | WPM4801 | S68N08ZRN
History: FDPF680N10T | KRF7343 | FDMS3660AS | MTP9435Q8 | UT20N03 | WPM4801 | S68N08ZRN



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