MSF5N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSF5N60  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.2 nS

Cossⓘ - Capacitancia de salida: 86 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm

Encapsulados: TO-220F

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MSF5N60 datasheet

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MSF5N60

MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

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MSF5N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V

 9.2. Size:253K  motorola
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MSF5N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03HD/D Designer's Data Sheet MMSF5N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V

 9.3. Size:293K  motorola
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MSF5N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V

Otros transistores... MSF2N40, MSF2N60, MSF2N70, MSF3N80, MSF4N60, MSF4N60L, MSF4N65, MSF5N50, 2N7000, MSF6N40, MSF6N60, MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, MSF7N80