MSF5N60 datasheet, аналоги, основные параметры
Наименование производителя: MSF5N60 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12.2 ns
Cossⓘ - Выходная емкость: 86 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
Тип корпуса: TO-220F
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Аналог (замена) для MSF5N60
- подборⓘ MOSFET транзистора по параметрам
MSF5N60 даташит
msf5n60.pdf
MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
mmsf5n02hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V
mmsf5n03hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N03HD/D Designer's Data Sheet MMSF5N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V
mmsf5n02hdrev5.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF5N02HD/D Designer's Data Sheet MMSF5N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V
Другие IGBT... MSF2N40, MSF2N60, MSF2N70, MSF3N80, MSF4N60, MSF4N60L, MSF4N65, MSF5N50, 2N7000, MSF6N40, MSF6N60, MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, MSF7N80
History: AP10N012IN
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