MSF5N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MSF5N60
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 33 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 4.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 16 nC
Время нарастания (tr): 12.2 ns
Выходная емкость (Cd): 86 pf
Сопротивление сток-исток открытого транзистора (Rds): 2.3 Ohm
Тип корпуса: TO-220F
MSF5N60 Datasheet (PDF)
msf5n60.pdf
MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
mmsf5n02hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf5n03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
mmsf5n02hdrev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf5n03hdrev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
mmsf5n03z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03Z/DAdvance InformationMMSF5N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 5.0 AMPERESMotorolas High Cell Density TMOS process and cont
msf5n50.pdf
MSF5N50 500V N-Channel MOSFET Description The MSF5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem
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