MSF5N60 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MSF5N60
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 12.2 ns
Cossⓘ - Выходная емкость: 86 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MSF5N60
MSF5N60 Datasheet (PDF)
msf5n60.pdf

MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
mmsf5n02hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf5n03hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N03HD/DDesigner's Data SheetMMSF5N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
mmsf5n02hdrev5.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF5N02HD/DDesigner's Data SheetMMSF5N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
Другие MOSFET... MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 , MSF5N50 , IRF9540 , MSF6N40 , MSF6N60 , MSF6N65 , MSF6N70 , MSF6N90 , MSF7N60 , MSF7N65 , MSF7N80 .
History: CEE02N6A | SPI16N50C3 | BRCS120N06SYM | AOUS66616 | P1850EF | CS5N100F | DMN67D8LW
History: CEE02N6A | SPI16N50C3 | BRCS120N06SYM | AOUS66616 | P1850EF | CS5N100F | DMN67D8LW



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