MSF7N80 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSF7N80 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 145 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Encapsulados: TO-220F
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MSF7N80 datasheet
msf7n80.pdf
MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins
mmsf7n03hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03HD/D Designer's Data Sheet MMSF7N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V
mmsf7n03zrev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03Z/D Designer's Data Sheet MMSF7N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERES Motorola s High Cell Density TMOS process and
mmsf7n03hdrev3.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03HD/D Designer's Data Sheet MMSF7N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V
Otros transistores... MSF5N60, MSF6N40, MSF6N60, MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, 2SK3878, MSF8N50, MSF8N60, MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3
History: AP150N03Q | MSF9N90 | IXTT24N50Q | SI5485DU | WST3404A | AP180N03G | AP10G04S
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