MSF7N80 datasheet, аналоги, основные параметры
Наименование производителя: MSF7N80 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 145 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
Тип корпуса: TO-220F
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Аналог (замена) для MSF7N80
- подборⓘ MOSFET транзистора по параметрам
MSF7N80 даташит
msf7n80.pdf
MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins
mmsf7n03hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03HD/D Designer's Data Sheet MMSF7N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V
mmsf7n03zrev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03Z/D Designer's Data Sheet MMSF7N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERES Motorola s High Cell Density TMOS process and
mmsf7n03hdrev3.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03HD/D Designer's Data Sheet MMSF7N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V
Другие IGBT... MSF5N60, MSF6N40, MSF6N60, MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, 2SK3878, MSF8N50, MSF8N60, MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3
History: SI5857DU | MTB070P15J3 | SI5481DU | WSR25N20 | AP1605 | MSW16N50 | MSF20N50
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