MSF8N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSF8N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MSF8N80 MOSFET
MSF8N80 datasheet
msf8n80.pdf
MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (typ 1.3 )@VGS=10V Gate Char
msf8n50.pdf
MSF8N50 500V N-Channel MOSFET Description The MSF8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 C Low On
msf8n60.pdf
MSF8N60 N-Channel Enhancement Mode Power MOSFET Description The MSF8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
Otros transistores... MSF6N65 , MSF6N70 , MSF6N90 , MSF7N60 , MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 , IRF9540N , MSF9N20 , MSF9N70 , MSF9N90 , MSK19N03 , MSK1N3 , MSK2N60F , MSK2N60T , MSK4D5N60F .
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