MSF8N80 Datasheet. Specs and Replacement
Type Designator: MSF8N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-220F
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MSF8N80 substitution
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MSF8N80 datasheet
msf8n80.pdf
MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (typ 1.3 )@VGS=10V Gate Char... See More ⇒
msf8n50.pdf
MSF8N50 500V N-Channel MOSFET Description The MSF8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 C Low On... See More ⇒
msf8n60.pdf
MSF8N60 N-Channel Enhancement Mode Power MOSFET Description The MSF8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim... See More ⇒
Detailed specifications: MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, MSF7N80, MSF8N50, MSF8N60, IRF9540N, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3, MSK2N60F, MSK2N60T, MSK4D5N60F
Keywords - MSF8N80 MOSFET specs
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