MSU2N60T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSU2N60T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-220
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MSU2N60T Datasheet (PDF)
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Otros transistores... MSU11N50Q , MSU12N60F , MSU12N60T , MSU18N40 , MSU1N60T , MSU1N60F , MSU1N60D , MSU1N60U , AON6380 , MSU2N60F , MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 .
History: P1203BV | IRFI4228 | IRF9242 | 2SK1234 | NTTFS4H05NTAG | IRFIZ14GPBF
History: P1203BV | IRFI4228 | IRF9242 | 2SK1234 | NTTFS4H05NTAG | IRFIZ14GPBF



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