MSU2N60T Datasheet. Specs and Replacement
Type Designator: MSU2N60T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-220
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MSU2N60T datasheet
msu2n60s.pdf
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msu2n60.pdf
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msu2n70.pdf
MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo... See More ⇒
Detailed specifications: MSU11N50Q, MSU12N60F, MSU12N60T, MSU18N40, MSU1N60T, MSU1N60F, MSU1N60D, MSU1N60U, IRFZ24N, MSU2N60F, MSU2N60D, MSU2N60U, MSU2N60S, MSU2N70, MSU4D5N50Q, MSU4N40, MSU4N60
Keywords - MSU2N60T MOSFET specs
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