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MSU2N60U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSU2N60U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 44 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 40 pF
   Resistencia entre drenaje y fuente RDS(on): 5 Ohm
   Paquete / Cubierta: TO-251

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MSU2N60U Datasheet (PDF)

 7.1. Size:744K  bruckewell
msu2n60s.pdf

MSU2N60U
MSU2N60U

MSU2N60S 600V N-Channel MOSFET Description The MSU2N60S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Rugged Gate Oxide Technology Extremely

 7.2. Size:540K  taitron
msu2n60.pdf

MSU2N60U
MSU2N60U

600V/2.0A POWER MOSFET (N-Channel) MSU2N60 600V/2.0A Power MOSFET (N-Channel) General Description MSU2N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

 9.1. Size:767K  bruckewell
msu2n70.pdf

MSU2N60U
MSU2N60U

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

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