MSU2N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSU2N60S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.7 Ohm
Paquete / Cubierta: TO-251
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MSU2N60S Datasheet (PDF)
msu2n60s.pdf

MSU2N60S 600V N-Channel MOSFET Description The MSU2N60S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Rugged Gate Oxide Technology Extremely
msu2n60.pdf

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msu2n70.pdf

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo
Otros transistores... MSU1N60T , MSU1N60F , MSU1N60D , MSU1N60U , MSU2N60T , MSU2N60F , MSU2N60D , MSU2N60U , IRF520 , MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T .
History: CM10N65AFZ | CS6N60FA9H | FCP165N65S3R0 | FDMC86320 | 2SK1960 | RJK0215DPA
History: CM10N65AFZ | CS6N60FA9H | FCP165N65S3R0 | FDMC86320 | 2SK1960 | RJK0215DPA



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