MSU2N60S Datasheet. Specs and Replacement

Type Designator: MSU2N60S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm

Package: TO-251

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MSU2N60S datasheet

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MSU2N60S

MSU2N60S 600V N-Channel MOSFET Description The MSU2N60S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Rugged Gate Oxide Technology Extremely... See More ⇒

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MSU2N60S

600V/2.0A POWER MOSFET (N-Channel) MSU2N60 600V/2.0A Power MOSFET (N-Channel) General Description MSU2N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati... See More ⇒

 9.1. Size:767K  bruckewell
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MSU2N60S

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo... See More ⇒

Detailed specifications: MSU1N60T, MSU1N60F, MSU1N60D, MSU1N60U, MSU2N60T, MSU2N60F, MSU2N60D, MSU2N60U, 75N75, MSU2N70, MSU4D5N50Q, MSU4N40, MSU4N60, MSU4N60S, MSU4N65, MSU5N50, MSU5N60T

Keywords - MSU2N60S MOSFET specs

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