MSU2N70 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSU2N70 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Encapsulados: TO-251
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MSU2N70 datasheet
msu2n70.pdf
MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo
msu2n60s.pdf
MSU2N60S 600V N-Channel MOSFET Description The MSU2N60S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Rugged Gate Oxide Technology Extremely
msu2n60.pdf
600V/2.0A POWER MOSFET (N-Channel) MSU2N60 600V/2.0A Power MOSFET (N-Channel) General Description MSU2N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati
Otros transistores... MSU1N60F, MSU1N60D, MSU1N60U, MSU2N60T, MSU2N60F, MSU2N60D, MSU2N60U, MSU2N60S, AO3400A, MSU4D5N50Q, MSU4N40, MSU4N60, MSU4N60S, MSU4N65, MSU5N50, MSU5N60T, MSU5N60F
History: MSF9N70 | MSK7N80F | WSR80N10 | IXTQ52P10P | SI5515CDC | AP0904GP-HF | AP10N012P
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