MSU2N70 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSU2N70  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO-251

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MSU2N70 datasheet

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MSU2N70

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

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MSU2N70

MSU2N60S 600V N-Channel MOSFET Description The MSU2N60S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Rugged Gate Oxide Technology Extremely

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MSU2N70

600V/2.0A POWER MOSFET (N-Channel) MSU2N60 600V/2.0A Power MOSFET (N-Channel) General Description MSU2N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

Otros transistores... MSU1N60F, MSU1N60D, MSU1N60U, MSU2N60T, MSU2N60F, MSU2N60D, MSU2N60U, MSU2N60S, AO3400A, MSU4D5N50Q, MSU4N40, MSU4N60, MSU4N60S, MSU4N65, MSU5N50, MSU5N60T, MSU5N60F