All MOSFET. MSU2N70 Datasheet

 

MSU2N70 Datasheet and Replacement


   Type Designator: MSU2N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-251
 

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MSU2N70 Datasheet (PDF)

 ..1. Size:767K  bruckewell
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MSU2N70

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

 9.1. Size:744K  bruckewell
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MSU2N70

MSU2N60S 600V N-Channel MOSFET Description The MSU2N60S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Rugged Gate Oxide Technology Extremely

 9.2. Size:540K  taitron
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MSU2N70

600V/2.0A POWER MOSFET (N-Channel) MSU2N60 600V/2.0A Power MOSFET (N-Channel) General Description MSU2N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

Datasheet: MSU1N60F , MSU1N60D , MSU1N60U , MSU2N60T , MSU2N60F , MSU2N60D , MSU2N60U , MSU2N60S , RU6888R , MSU4D5N50Q , MSU4N40 , MSU4N60 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F .

History: TK10Q60W | WMO120N04TS

Keywords - MSU2N70 MOSFET datasheet

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