IRFS644 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS644
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 67 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de IRFS644 MOSFET
IRFS644 Datasheet (PDF)
irfs644b.pdf
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
irf644b irfs644b.pdf
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
Otros transistores... IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRFS642 , BS170 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A , IRFS721 .
History: BLC75N120-F | 8N80A | 2N60G-T6C-K | STB25NM50N-1 | BLP02N08-F | BLP04N08-P | 2N60G-TM3-T
History: BLC75N120-F | 8N80A | 2N60G-T6C-K | STB25NM50N-1 | BLP02N08-F | BLP04N08-P | 2N60G-TM3-T
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