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MSU4N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSU4N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.9 Ohm
   Paquete / Cubierta: TO-251
 

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MSU4N65 Datasheet (PDF)

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MSU4N65

MSU4N65 650V N-Channel MOSFET Description The MSU4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

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 msu4n60 s.pdf pdf_icon

MSU4N65

Preliminary MSU4N60_S 600V N-Channel MOSFET Description The MSU4N60_S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design V

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MSU4N65

MSU4N60 600V N-Channel MOSFET Description The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme

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 msu4n40.pdf pdf_icon

MSU4N65

MSU4N40 400V N-Channel MOSFET Description The MSU4N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

MOSTRAR MÁS

Otros transistores... MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 , MSU4N60S , RU7088R , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P .

History: HSP0115 | NCE0140K2 | KI8810DS | IRF3706SPBF | SFW9644 | IPAN60R650CE | RJK0214DPA

 

 
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