IRFS710A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFS750AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4mG Synchronous rectifier applications ID (Silicon Limited) 232A

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl

StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

StrongIRFETIRFS7434PbFIRFSL7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applications 320AID (Silicon Limited)l Resonant mode power supplies SID (Package Limited) 19

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies SID 8

StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A

StrongIRFETIRFS7440PbFIRFSL7440PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl Battery powered circuitsDVDSS 40Vl Half-bridge and full-bridge topologiesRDS(on) typ. 2.0ml Synchronous rectifier applications max. 2.5ml Resonant mode power supplies GID 208Al OR-ing and redundant power switchesl DC/DC an

StrongIRFET IRFS7734-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications VDSS 75V D Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G max 3.05m Synchronous rectifier applications S Resonant mode power supplies ID 197A O

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S OR-ing

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies SID 8

StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications DRDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4mG Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A

StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications DRDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode

StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications DVDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power sup

StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0mG max Resonant mode power supplies ID (Silicon Limited

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A

November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

IRFS730 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

isc N-Channel MOSFET Transistor IRFS7730FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Isc N-Channel MOSFET Transistor IRFS7787FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

isc N-Channel MOSFET Transistor IRFS7434FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc N-Channel MOSFET Transistor IRFS7540FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Isc N-Channel MOSFET Transistor IRFS7762FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

isc N-Channel MOSFET Transistor IRFS7534TRLPBFDESCRIPTIONDrain Current I =232 A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS7440PBFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC/AC InvertersDC/DC a

isc N-Channel MOSFET Transistor IRFS7530FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc N-Channel MOSFET Transistor IRFS7734FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc N-Channel MOSFET Transistor IRFS7537FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc N-Channel MOSFET Transistor IRFS7437FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS