IRFS710A. Аналоги и основные параметры
Наименование производителя: IRFS710A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 23 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 35 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.6 Ohm
Тип корпуса: TO220F
Аналог (замена) для IRFS710A
- подборⓘ MOSFET транзистора по параметрам
IRFS710A даташит
irfs750a.pdf
IRFS750A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo
irfb7534 irfs7534pbf irfsl7534pbf.pdf
StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4m G Synchronous rectifier applications ID (Silicon Limited) 232A
irfs7437pbf irfsl7437pbf.pdf
StrongIRFET IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications HEXFET Power MOSFET l Battery powered circuits VDSS 40V D l Half-bridge and full-bridge topologies l Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches G ID (Silicon Limite
irfb7787 irfs7787pbf irfsl7787pbf.pdf
StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl
irfb7537 irfs7537pbf irfsl7537pbf.pdf
StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup
irfs7430-7ppbf.pdf
StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D PWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75m G max Electronic ballast applications ID (Silicon Limited) 52
irfs7434pbf irfsl7434pbf.pdf
StrongIRFET IRFS7434PbF IRFSL7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications 320A ID (Silicon Limited) l Resonant mode power supplies S ID (Package Limited) 19
irfb7530 irfs7530pbf irfsl7530pbf.pdf
StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A
irfs7762pbf irfsl7762pbf.pdf
StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies S ID 8
irfs7430pbf irfsl7430pbf.pdf
StrongIRFET IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications VDSS 40V D l Brushed motor drive applications RDS(on) typ. 0.97m l BLDC motor drive applications l Battery powered circuits max. 1.2m G l Half-bridge and full-bridge topologies 426A ID (Silicon Limited) l Synchronous rectifier applications S ID (Package Limited) 195A l Resonant mode power supplies l O
irfs7534-7ppbf.pdf
StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit
irfb7734pbf irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
irfb7730 irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A
irfs7440pbf irfsl7440pbf.pdf
StrongIRFET IRFS7440PbF IRFSL7440PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l Battery powered circuits D VDSS 40V l Half-bridge and full-bridge topologies RDS(on) typ. 2.0m l Synchronous rectifier applications max. 2.5m l Resonant mode power supplies G ID 208A l OR-ing and redundant power switches l DC/DC an
irfs7734-7ppbf.pdf
StrongIRFET IRFS7734-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications VDSS 75V D Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G max 3.05m Synchronous rectifier applications S Resonant mode power supplies ID 197A O
irfb7734 irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
irfb7787pbf irfs7787pbf irfsl7787pbf.pdf
StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S OR-ing
irfs7762 irfsl7762pbf.pdf
StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies S ID 8
irfs7530-7ppbf.pdf
StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications D RDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4m G Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode
irfs7437-7ppbf.pdf
StrongIRFET IRFS7437-7PPbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D l PWM Inverterized topologies VDSS 40V l Battery powered circuits RDS(on) typ. 1.1m l Half-bridge and full-bridge topologies max. 1.4m l Electronic ballast applications G ID (Silicon Limited) 295A l Synchronous rectifier applications l Reso
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A
irfs7730-7ppbf.pdf
StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications D RDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode
irfb7540 irfs7540pbf irfsl7540pbf.pdf
StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power sup
irfs7434-7ppbf.pdf
StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0m G max Resonant mode power supplies ID (Silicon Limited
irfb7530pbf irfs7530pbf irfsl7530pbf.pdf
StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A
irfs740a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
irfs730a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic
irfs720a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic
irfs730.pdf
IRFS730 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
irfs740.pdf
IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
irfs7730.pdf
isc N-Channel MOSFET Transistor IRFS7730 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs7787.pdf
Isc N-Channel MOSFET Transistor IRFS7787 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
irfs7434.pdf
isc N-Channel MOSFET Transistor IRFS7434 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs7540.pdf
isc N-Channel MOSFET Transistor IRFS7540 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs7762.pdf
Isc N-Channel MOSFET Transistor IRFS7762 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
irfs7534trlpbf.pdf
isc N-Channel MOSFET Transistor IRFS7534TRLPBF DESCRIPTION Drain Current I =232 A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan
irfs7440pbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS7440PBF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC/AC Inverters DC/DC a
irfs7530.pdf
isc N-Channel MOSFET Transistor IRFS7530 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs7734.pdf
isc N-Channel MOSFET Transistor IRFS7734 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs7537.pdf
isc N-Channel MOSFET Transistor IRFS7537 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs7437.pdf
isc N-Channel MOSFET Transistor IRFS7437 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Другие IGBT... IRFS640, IRFS640A, IRFS642, IRFS644, IRFS644A, IRFS645, IRFS650A, IRFS654A, 10N65, IRFS720, IRFS720A, IRFS721, IRFS722, IRFS723, IRFS730, IRFS730A, IRFS731
History: AONR32318
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