APM4030BNU Todos los transistores

 

APM4030BNU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM4030BNU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-252-3

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APM4030BNU Datasheet (PDF)

 ..1. Size:514K  sino
apm4030bnu.pdf

APM4030BNU
APM4030BNU

APM4030BNUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,DRDS(ON)=17m (typ.) @ VGS=10VSRDS(ON)=26m (typ.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)(2)D1(1)ApplicationsG1 Inverter Application in LCM and LCD TV.S1(3)N-Channel MOSFETOrdering and Marking Informati

 7.1. Size:202K  anpec
apm4030nu.pdf

APM4030BNU
APM4030BNU

APM4030NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,RDS(ON)=17m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VG D Super High Dense Cell DesignS Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available (RoHS (2)D1Compliant)Applications(1)G1 Inverter Application in LCM and LCD TVS1(3)N-Channel MOSFETOrder

 7.2. Size:201K  anpec
apm4030anu.pdf

APM4030BNU
APM4030BNU

APM4030ANUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,RDS(ON)=17m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VG D Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)DApplications Inverter application in LCD Monitor/TVGSN-Channel MOSFETOrdering and Marking InformationPackag

 8.1. Size:196K  anpec
apm4034nu.pdf

APM4030BNU
APM4030BNU

APM4034NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/20A,RDS(ON)= 29m (typ.) @ VGS= 10VRDS(ON)= 45m (typ.) @ VGS= 5VG D Super High Dense Cell DesignS Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant)(2)D1Applications(1)G1 Inventer Application in LCM and LCD TVS1(3)N-Channel MOSFETOrdering and Marking

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