All MOSFET. APM4030BNU Datasheet

 

APM4030BNU MOSFET. Datasheet pdf. Equivalent


   Type Designator: APM4030BNU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252-3

 APM4030BNU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APM4030BNU Datasheet (PDF)

 ..1. Size:514K  sino
apm4030bnu.pdf

APM4030BNU
APM4030BNU

APM4030BNUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,DRDS(ON)=17m (typ.) @ VGS=10VSRDS(ON)=26m (typ.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)(2)D1(1)ApplicationsG1 Inverter Application in LCM and LCD TV.S1(3)N-Channel MOSFETOrdering and Marking Informati

 7.1. Size:202K  anpec
apm4030nu.pdf

APM4030BNU
APM4030BNU

APM4030NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,RDS(ON)=17m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VG D Super High Dense Cell DesignS Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available (RoHS (2)D1Compliant)Applications(1)G1 Inverter Application in LCM and LCD TVS1(3)N-Channel MOSFETOrder

 7.2. Size:201K  anpec
apm4030anu.pdf

APM4030BNU
APM4030BNU

APM4030ANUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,RDS(ON)=17m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VG D Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)DApplications Inverter application in LCD Monitor/TVGSN-Channel MOSFETOrdering and Marking InformationPackag

 8.1. Size:196K  anpec
apm4034nu.pdf

APM4030BNU
APM4030BNU

APM4034NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/20A,RDS(ON)= 29m (typ.) @ VGS= 10VRDS(ON)= 45m (typ.) @ VGS= 5VG D Super High Dense Cell DesignS Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant)(2)D1Applications(1)G1 Inventer Application in LCM and LCD TVS1(3)N-Channel MOSFETOrdering and Marking

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: HGP055N12S

 

 
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