APM4050BPU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APM4050BPU  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.5 nS

Cossⓘ - Capacitancia de salida: 125 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO-252-3

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APM4050BPU datasheet

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APM4050BPU

APM4050BPU P-Channel Enhancement Mode MOSFET Features Pin Description D -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10V S RDS(ON)=59m (typ.) @ VGS=-4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) S Applications G Power Management in LCD/TV Inverter. D P-Channel MOSFET Ordering and Marking Information Package

 7.1. Size:202K  anpec
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APM4050BPU

APM4050PU P-Channel Enhancement Mode MOSFET Features Pin Description -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10V G D RDS(ON)=47m (typ.) @ VGS=-4.5V Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS S Compliant) Applications G Power Management in LCD/TV Inverter D P-Channel MOSFET Ordering and Mar

 7.2. Size:201K  anpec
apm4050apu.pdf pdf_icon

APM4050BPU

APM4050APU P-Channel Enhancement Mode MOSFET Features Pin Description -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10V G D RDS(ON)=47m (typ.) @ VGS=-4.5V S Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) S Applications Inverter application in LCD Monitor/TV G D P-Channel MOSFET Ordering and Marking Informatio

 7.3. Size:1539K  cn vbsemi
apm4050puc.pdf pdf_icon

APM4050BPU

APM4050PUC www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, u

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