APQ03SN80CB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APQ03SN80CB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.8 Ohm
   Paquete / Cubierta: TO-252

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APQ03SN80CB Datasheet (PDF)

..1. Size:856K alpha pacific
apq03sn80cb.pdf

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

4.1. Size:897K alpha pacific
apq03sn80cf apq03sn80ch.pdf

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

5.1. Size:470K alpha pacific
apq03sn80a apq03sn80af.pdf

DEVICE SPECIFICATION apQ03SN80A(F)800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6(typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

7.1. Size:353K alpha pacific
apq03sn60ab.pdf

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 3ARDS(on) =3.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

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