APQ03SN80CB Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APQ03SN80CB
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 50 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.8 Ohm
Тип корпуса: TO-252
Аналог (замена) для APQ03SN80CB
APQ03SN80CB Datasheet (PDF)
apq03sn80cb.pdf

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
apq03sn80cf apq03sn80ch.pdf

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to
apq03sn80a apq03sn80af.pdf

DEVICE SPECIFICATION apQ03SN80A(F)800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6(typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
apq03sn60ab.pdf

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 3ARDS(on) =3.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat
Другие MOSFET... APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB , APQ03SN80A , APQ03SN80AF , 18N50 , APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF , APQ04SN60CA , APQ04SN60CB , APQ04SN60CE , APQ04SN60CF .



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