APQ06SN60AF Todos los transistores

 

APQ06SN60AF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ06SN60AF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO-220F

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APQ06SN60AF datasheet

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APQ06SN60AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0 (typ) VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.1. Size:377K  alpha pacific
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APQ06SN60AF

DEVICE SPECIFICATION apQ06SN60A(F) 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 4.2. Size:695K  alpha pacific
 apq06sn60ah.pdf pdf_icon

APQ06SN60AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0 (typ) VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 6.1. Size:633K  alpha pacific
 apq06sn65af apq06sn65ah.pdf pdf_icon

APQ06SN60AF

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

MOSTRAR MÁS

Otros transistores... APQ04SN60CA , APQ04SN60CB , APQ04SN60CE , APQ04SN60CF , APQ04SN60CH , APQ05SN60A , APQ05SN60AF , APQ06SN60A , IRF2807 , APQ06SN60AH , APQ06SN65AF , APQ06SN65AH , APQ07SN60AF , APQ07SN60AH , APQ07SN65AF , APQ07SN65AH , APQ07SN80BF .

History: IRF8788

 

 

 

 

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