Справочник MOSFET. APQ06SN60AF

 

APQ06SN60AF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ06SN60AF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 16 nC
   tr ⓘ - Время нарастания: 47 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для APQ06SN60AF

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ06SN60AF Datasheet (PDF)

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APQ06SN60AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

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APQ06SN60AF

DEVICE SPECIFICATION apQ06SN60A(F)600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 4.2. Size:695K  alpha pacific
 apq06sn60ah.pdf pdf_icon

APQ06SN60AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

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 apq06sn65af apq06sn65ah.pdf pdf_icon

APQ06SN60AF

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

ПОКАЗАТЬ ЕЩЁ

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History: BRCS500P10DP | SIHP8N50D

 

 
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