APQ06SN65AF Todos los transistores

 

APQ06SN65AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ06SN65AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

APQ06SN65AF Datasheet (PDF)

 ..1. Size:633K  alpha pacific
 apq06sn65af apq06sn65ah.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.1. Size:377K  alpha pacific
 apq06sn60a.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION apQ06SN60A(F)600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 6.2. Size:661K  alpha pacific
 apq06sn60af.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 6.3. Size:695K  alpha pacific
 apq06sn60ah.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SKI03087 | SMK1820D | SQD50N04-09H | NCEP60T20 | PHP78NQ03LT | SVF10N60STR | VN3205N8

 

 
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