All MOSFET. APQ06SN65AF Datasheet

 

APQ06SN65AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: APQ06SN65AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220F

 APQ06SN65AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ06SN65AF Datasheet (PDF)

 ..1. Size:633K  alpha pacific
 apq06sn65af apq06sn65ah.pdf

APQ06SN65AF APQ06SN65AF

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.1. Size:377K  alpha pacific
 apq06sn60a.pdf

APQ06SN65AF APQ06SN65AF

DEVICE SPECIFICATION apQ06SN60A(F)600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 6.2. Size:661K  alpha pacific
 apq06sn60af.pdf

APQ06SN65AF APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 6.3. Size:695K  alpha pacific
 apq06sn60ah.pdf

APQ06SN65AF APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

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