All MOSFET. APQ06SN65AF Datasheet

 

APQ06SN65AF Datasheet and Replacement


   Type Designator: APQ06SN65AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220F
 

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APQ06SN65AF Datasheet (PDF)

 ..1. Size:633K  alpha pacific
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APQ06SN65AF

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.1. Size:377K  alpha pacific
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APQ06SN65AF

DEVICE SPECIFICATION apQ06SN60A(F)600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 6.2. Size:661K  alpha pacific
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APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 6.3. Size:695K  alpha pacific
apq06sn60ah.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

Datasheet: APQ04SN60CE , APQ04SN60CF , APQ04SN60CH , APQ05SN60A , APQ05SN60AF , APQ06SN60A , APQ06SN60AF , APQ06SN60AH , AON6380 , APQ06SN65AH , APQ07SN60AF , APQ07SN60AH , APQ07SN65AF , APQ07SN65AH , APQ07SN80BF , APQ07SN80BH , APQ08SN50B .

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