APQ06SN65AF PDF and Equivalents Search

 

APQ06SN65AF Specs and Replacement

Type Designator: APQ06SN65AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220F

APQ06SN65AF substitution

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APQ06SN65AF datasheet

 ..1. Size:633K  alpha pacific
 apq06sn65af apq06sn65ah.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

 6.1. Size:377K  alpha pacific
 apq06sn60a.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION apQ06SN60A(F) 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-... See More ⇒

 6.2. Size:661K  alpha pacific
 apq06sn60af.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0 (typ) VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

 6.3. Size:695K  alpha pacific
 apq06sn60ah.pdf pdf_icon

APQ06SN65AF

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0 (typ) VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

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Detailed specifications: APQ04SN60CE, APQ04SN60CF, APQ04SN60CH, APQ05SN60A, APQ05SN60AF, APQ06SN60A, APQ06SN60AF, APQ06SN60AH, IRFZ24N, APQ06SN65AH, APQ07SN60AF, APQ07SN60AH, APQ07SN65AF, APQ07SN65AH, APQ07SN80BF, APQ07SN80BH, APQ08SN50B

Keywords - APQ06SN65AF MOSFET specs

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