APQ08SN50B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ08SN50B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 134 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO-220

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APQ08SN50B datasheet

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APQ08SN50B

DEVICE SPECIFICATION apQ08SN50B(F) 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , RDS(on) =0.72 (typ)@ effect transistors are produced using planar stripe, VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

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APQ08SN50B

DEVICE SPECIFICATION APQ08SN50BE 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , effect transistors are produced using planar stripe, RDS(on) =0.72 (typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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APQ08SN50B

DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A effect transistors are produced using planar stripe, RDS(on) =0.72 (typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

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