APQ08SN50B - аналоги, параметры транзистора - Справочник транзисторов

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DEVICE SPECIFICATION apQ08SN50B(F) 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , RDS(on) =0.72 (typ)@ effect transistors are produced using planar stripe, VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

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DEVICE SPECIFICATION APQ08SN50BE 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A , effect transistors are produced using planar stripe, RDS(on) =0.72 (typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 8A effect transistors are produced using planar stripe, RDS(on) =0.72 (typ) VGS =10V, ID =4.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

Другие MOSFET... APQ06SN65AF , APQ06SN65AH , APQ07SN60AF , APQ07SN60AH , APQ07SN65AF , APQ07SN65AH , APQ07SN80BF , APQ07SN80BH , IRF1405 , APQ08SN50BE , APQ08SN50BF , APQ08SN50BH , APQ09SN50A , APQ09SN50AF , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ .