APQ10SN40AF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ10SN40AF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: TO-220F

  📄📄 Copiar 

 Búsqueda de reemplazo de APQ10SN40AF MOSFET

- Selecciónⓘ de transistores por parámetros

 

APQ10SN40AF datasheet

 ..1. Size:914K  alpha pacific
 apq10sn40af.pdf pdf_icon

APQ10SN40AF

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.1. Size:303K  alpha pacific
 apq10sn40a.pdf pdf_icon

APQ10SN40AF

DEVICE SPECIFICATION apQ10SN40A 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 4.2. Size:914K  alpha pacific
 apq10sn40ah.pdf pdf_icon

APQ10SN40AF

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 7.1. Size:687K  alpha pacific
 apq10sn60af.pdf pdf_icon

APQ10SN40AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

MOSTRAR MÁS

Otros transistores... APQ08SN50BH, APQ09SN50A, APQ09SN50AF, APQ09SN90AD, APQ0CSN60A, APQ0CSN60AJ, APQ0DSN60AJ, APQ10SN40A, 3401, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH, APQ110SN5EA, APQ110SN5EAD