APQ10SN40AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APQ10SN40AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 44 W
   Voltaje máximo drenador - fuente |Vds|: 400 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 41 nC
   Tiempo de subida (tr): 27 nS
   Conductancia de drenaje-sustrato (Cd): 330 pF
   Resistencia entre drenaje y fuente RDS(on): 0.55 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET APQ10SN40AF

APQ10SN40AF Datasheet (PDF)

..1. Size:914K alpha pacific
apq10sn40af.pdf

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49(typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

4.1. Size:303K alpha pacific
apq10sn40a.pdf

DEVICE SPECIFICATION apQ10SN40A400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

4.2. Size:914K alpha pacific
apq10sn40ah.pdf

7.1. Size:687K alpha pacific
apq10sn60af.pdf

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

7.2. Size:373K alpha pacific
apq10sn65af apq10sn65ah.pdf

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75(typ)VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

7.3. Size:437K alpha pacific
apq10sn60a.pdf

DEVICE SPECIFICATION apQ10SN60A(F)600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10ARDS(on) =0.6(Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

7.4. Size:687K alpha pacific
apq10sn60ah.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: