APQ10SN40AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APQ10SN40AF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 41 nC
   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: TO-220F

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APQ10SN40AF Datasheet (PDF)

..1. Size:914K alpha pacific
apq10sn40af.pdf

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49(typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

4.1. Size:303K alpha pacific
apq10sn40a.pdf

DEVICE SPECIFICATION apQ10SN40A400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

4.2. Size:914K alpha pacific
apq10sn40ah.pdf

7.1. Size:687K alpha pacific
apq10sn60af.pdf

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

7.2. Size:373K alpha pacific
apq10sn65af apq10sn65ah.pdf

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75(typ)VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

7.3. Size:437K alpha pacific
apq10sn60a.pdf

DEVICE SPECIFICATION apQ10SN60A(F)600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10ARDS(on) =0.6(Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

7.4. Size:687K alpha pacific
apq10sn60ah.pdf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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