APQ10SN40AF MOSFET Datasheet: N-Ch, 400V, 10A. Full specification with pinout and replacement list

APQ10SN40AF Specs and Replacement

Type Designator: APQ10SN40AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-220F

APQ10SN40AF substitution

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APQ10SN40AF datasheet

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DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

4.1. Size:303K alpha pacific
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DEVICE SPECIFICATION apQ10SN40A 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

4.2. Size:914K alpha pacific
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DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒