APQ10SN60AF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ10SN60AF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.3 nS

Cossⓘ - Capacitancia de salida: 162 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO-220F

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APQ10SN60AF datasheet

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APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.1. Size:437K  alpha pacific
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APQ10SN60AF

DEVICE SPECIFICATION apQ10SN60A(F) 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A RDS(on) =0.6 (Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 4.2. Size:687K  alpha pacific
 apq10sn60ah.pdf pdf_icon

APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.1. Size:373K  alpha pacific
 apq10sn65af apq10sn65ah.pdf pdf_icon

APQ10SN60AF

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75 (typ) VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

MOSTRAR MÁS

Otros transistores... APQ09SN90AD, APQ0CSN60A, APQ0CSN60AJ, APQ0DSN60AJ, APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, IRF830, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH, APQ110SN5EA, APQ110SN5EAD, APQ110SN5EAH, APQ11BSN40A, APQ12SN60A